Memory device using comb-like routing structure for reduced metal line loading

ABSTRACT

Embodiments of three-dimensional memory device architectures and fabrication methods therefor are disclosed. In an example, the memory device includes a substrate and one or more peripheral devices on the substrate. The memory device also includes one or more interconnect layers and a semiconductor layer disposed over the one or more interconnect layers. A layer stack having alternating conductor and insulator layers is disposed above the semiconductor layer. A plurality of structures extend vertically through the layer stack. A first set of conductive lines are electrically coupled with a first set of the plurality of structures and a second set of conductive lines are electrically coupled with a second set of the plurality of structures different from the first set. The first and second sets of conductive lines are vertically distanced from opposite ends of the plurality of structures.

BACKGROUND

Embodiments of the present disclosure relate to three-dimensional (3D)memory devices and fabrication methods thereof.

Flash memory devices have undergone rapid development. Flash memorydevices can store data for a considerably long time without powering(i.e., they are a form of non-volatile memory), and have advantages suchas high integration level, fast access, easy erasing, and rewriting. Tofurther improve the bit density and reduce cost of flash memory devices,three-dimensional NAND flash memory devices have been developed.

A three-dimensional NAND flash memory device includes a stack of gateelectrodes arranged over a substrate, with a plurality of semiconductorchannels through and intersecting word lines, into the p- and/or n-typeimplanted substrate. The bottom/lower gate electrodes function asbottom/lower selective gates (BSG). The top/upper gate electrodesfunction as top/upper selective gates (TSG). Back-End-of Line (BEOL)Metal plays the role of Bit-Lines (BLs). The word lines/gate electrodesbetween the top/upper selective gate electrodes and the bottom/lowergate electrodes function as word lines (WLs). The intersection of a wordline and a semiconductor channel forms a memory cell. WLs and BLs aretypically laid perpendicular to each other (e.g., in an X-direction anda Y-direction), and TSGs are laid in a direction perpendicular to boththe WLs and BLs (e.g., in a Z-direction.)

BRIEF SUMMARY

Embodiments of three-dimensional memory device architectures andfabrication methods therefore are disclosed herein. The disclosedstructures and methods provide a staggered fabrication for various metallines, such as the bit lines, to reduce the density of the metal lineson the same plane. Reducing the metal line density leads to reducedcross-talk between the lines and faster program speeds.

In some embodiments, a memory device includes a substrate and one ormore peripheral devices on the substrate. The memory device alsoincludes one or more interconnect layers electrically coupled with theone or more peripheral devices, and a semiconductor layer disposed overthe one or more interconnect layers. A layer stack having alternatingconductor and insulator layers is disposed above the semiconductorlayer. A plurality of structures extend vertically through the layerstack. The memory device also includes a first set of conductive lineselectrically coupled with a first set of the plurality of structures anda second set of conductive lines electrically coupled with a second setof the plurality of structures different from the first set. The firstset of conductive lines are vertically distanced from one end of theplurality of structures and the second set of conductive lines arevertically distanced from an opposite end of the plurality ofstructures.

In some embodiments, the memory device further includes one or moresecond interconnect layers, the one or more second interconnect layersbeing electrically coupled to the second set of conductive lines.

In some embodiments, the one or more second interconnect layerscomprises conductive pads configured to provide electrical connection toexternal devices.

In some embodiments, the plurality of structures includes one or moreNAND memory strings.

In some embodiments, the one or more NAND strings each includes aplurality of layers surrounding a core insulating material, wherein theplurality of layers includes a blocking layer, a storage layer, atunneling layer, and a channel layer.

In some embodiments, the plurality of structures comprises one or moreconductive contacts.

In some embodiments, the first set of the plurality of structuresincludes only the NAND memory strings and the second set of theplurality of structures includes only the conductive contacts.

In some embodiments, the second set of conductive lines are located onan opposite side of the semiconductor layer from the first set ofconductive lines.

In some embodiments, the first semiconductor structure further includesa plurality of conductive pads configured to provide electricalconnection to external devices.

In some embodiments, the memory device further includes further includesvias extending through a thickness of the semiconductor layer, where thevias electrically contact the first set of conductive lines and thefirst set of the plurality of structures.

In some embodiments, a memory device includes a substrate, a dielectricmaterial disposed on a first surface of the substrate, a semiconductorlayer disposed on the dielectric material, and a layer stack havingalternating conductor and insulator layers disposed on the semiconductorlayer. The memory device also includes a plurality of structuresextending vertically through the layer stack. The memory device alsoincludes a first set of conductive lines electrically coupled with afirst set of the plurality of structures and a second set of conductivelines electrically coupled with a second set of the plurality ofstructures different from the first set. The first set of conductivelines are vertically distanced from one end of the plurality ofstructures and the second set of conductive lines are verticallydistanced from an opposite end of the plurality of structures. Thememory device also includes one or more peripheral devices formed on asecond surface of the substrate, the second surface being opposite tothe first surface.

In some embodiments, the plurality of structures includes one or moreNAND memory strings.

In some embodiments, the one or more NAND strings each includes aplurality of layers surrounding a core insulating material, wherein theplurality of layers includes a blocking layer, a storage layer, atunneling layer, and a channel layer.

In some embodiments, the plurality of structures comprises one or moreconductive contacts.

In some embodiments, the first set of the plurality of structuresincludes only the NAND memory strings and the second set of theplurality of structures includes only the conductive contacts.

In some embodiments, the second set of conductive lines are located onan opposite side of the semiconductor layer from the first set ofconductive lines.

In some embodiments, the first set of conductive lines are disposed inthe dielectric material.

In some embodiments, the memory device includes one or more interconnectlayers coupled to the one or more peripheral devices.

In some embodiments, the memory device further includes further includesvias extending through a thickness of the substrate, where the viaselectrically contact the first set of conductive lines and the one ormore interconnect layers.

In some embodiments, the one or more interconnect layers includesconductive pads designed to provide electrical connection to externaldevices.

In some embodiments, a method to form a memory device includes formingone or more peripheral devices on a substrate and one or moreinterconnect layers over the one or more peripheral devices. The one ormore interconnect layers are electrically coupled with the one or moreperipheral devices. The method also includes forming a first set ofconductive lines electrically coupled with the one or more interconnectlayers, and forming a semiconductor layer over the first set ofconductive lines. The method includes forming vias through a thicknessof the semiconductor layer where the vias are electrically coupled tothe first set of conductive lines. The method also includes forming, onthe semiconductor layer, a layer stack having alternating conductor andinsulator layers. The method includes forming a plurality of structureseach extending vertically through the layer stack. A first set of theplurality of structures is electrically coupled to the first set ofconductive lines using the vias. The method also includes forming asecond set of conductive lines over an end vertically distanced from theplurality of structures. The second set of conductive lines iselectrically coupled to a second set of the plurality of structuresdifferent from the first set.

In some embodiments, a method to form a memory device includes forming afirst set of conductive lines over a first surface of a substrate, thefirst set of conductive lines being surrounded by a dielectric layer onthe first surface of the substrate. The method also includes forming asemiconductor layer over the first set of conductive lines, and formingvias through a thickness of the semiconductor layer. The vias areelectrically coupled to the first set of conductive lines. The methodalso includes forming, on the semiconductor layer, a layer stack havingalternating conductor and insulator layers. The method includes forminga plurality of structures each extending vertically through the layerstack. A first set of the plurality of structures is electricallycoupled to the first set of conductive lines using the vias. The methodalso includes forming a second set of conductive lines over an endvertically distanced from the plurality of structures. The second set ofconductive lines are electrically coupled to a second set of theplurality of structures different from the first set. The method alsoincludes forming one or more peripheral devices on a second surface ofthe substrate opposite from the first surface.

The three-dimensional memory devices provided by the present disclosureinclude bit lines and other metal routing lines that are provided atdifferent heights above (or below) the substrate such that they are notdensely packed on the same plane.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when reading with the accompanying figures. It isnoted that, in accordance with the common practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofillustration and discussion.

FIG. 1 is an illustration of a three-dimensional memory device.

FIG. 2 illustrates a cross-section view of a three-dimensional memorydevice, according to some embodiments.

FIG. 3 illustrates a cross-section view of another three-dimensionalmemory device, according to some embodiments.

FIGS. 4A-4H illustrate side views of a three-dimensional memorystructure at different stages of an exemplary fabrication process,according to some embodiments.

FIGS. 5A-5E illustrate side views of another three-dimensional memorystructure at different stages of an exemplary fabrication process,according to some embodiments.

FIG. 6 is an illustration of a fabrication process for forming athree-dimensional memory structure, according to some embodiments.

FIG. 7 is an illustration of another fabrication process for forming athree-dimensional memory structure, according to some embodiments.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of“on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure, or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnect layer can include one or more conductor and contact layers(in which contacts, interconnect lines, and/or vias are formed) and oneor more dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “3D memory device” refers to a semiconductordevice with vertically oriented strings of memory cell transistors(referred to herein as “memory strings,” such as NAND strings) on alaterally-oriented substrate so that the memory strings extend in thevertical direction with respect to the substrate. As used herein, theterm “vertical/vertically” means nominally perpendicular to the lateralsurface of a substrate.

In the present disclosure, for ease of description, “tier” is used torefer to elements of substantially the same height along the verticaldirection. For example, a word line and the underlying gate dielectriclayer can be referred to as “a tier,” a word line and the underlyinginsulating layer can together be referred to as “a tier,” word lines ofsubstantially the same height can be referred to as “a tier of wordlines” or similar, and so on.

Any of the memory devices described herein can be used in an electronicsystem, such as, for example, portable electronics, computers, orwearable electronics.

FIG. 1 illustrates a portion of a three-dimensional NAND flash memorydevice 100. The flash memory device 100 includes a substrate 101, aninsulating layer 103 over substrate 101, a tier of lower selective gateelectrodes 104 over the insulating layer 103, and a plurality of tiersof control gate electrodes 107 stacking on top of bottom selective gateelectrodes 104 to form an alternating conductor/dielectric stack. Theflash memory device also includes a tier of upper selective gateelectrodes 109 over the stack of control gate electrodes 107, dopedsource line regions 120 in portions of substrate 101 between adjacentlower selective gate electrodes 104, and NAND strings 114 through upperselective gate electrodes 109, control gate electrodes 107, lowerselective gate electrodes 104, and insulating layer 103. NAND strings114 includes a memory film 113 over the inner surface of NAND strings114 and a core filling film 115 surrounded by memory film 113. The flashmemory device 100 further includes a plurality of bit lines 111connected to NAND strings 114 over upper selective gate electrodes 109and a plurality of metal interconnects 119 connected to the gateelectrodes through a plurality of metal contacts 117. Insulating layersbetween adjacent tiers of gate electrodes are not shown in FIG. 1 forclarity. The gate electrodes include upper selective gate electrodes109, control gate electrodes 107 (e.g., also referred to as the wordlines), and lower selective gate electrodes 104.

In FIG. 1, for illustrative purposes, three tiers of control gateelectrodes 107-1, 107-2, and 107-3 are shown together with one tier ofupper selective gate electrodes 109 and one tier of lower selective gateelectrodes 104. Each tier of gate electrodes have substantially the sameheight over substrate 101. The gate electrodes of each tier areseparated by gate line slits 108-1 and 108-2 through the stack of gateelectrodes. Each of the gate electrodes in a same tier is conductivelyconnected to a metal interconnect 119 through a metal contact 117. Thatis, the number of metal contacts formed on the gate electrodes equalsthe number of gate electrodes (i.e., the sum of all upper selective gateelectrodes 109, control gate electrodes 107, and lower selective gateelectrodes 104). Further, the same number of metal interconnects isformed to connect to each metal contact via. In some arrangements,additional metal contacts are formed to connect to other structuresbeyond the gate electrodes, such as, for example, dummy structures.

When forming NAND strings 114, other vertical structures may also beformed that extend through the tiers of control gate electrodes 107-1,107-2, and 107-3 down to substrate 101. Examples of other verticalstructures include through array contacts (TACs) that may be used tomake electrical connection with components above and/or below the tiersof gate electrodes. These other vertical structures are not illustratedin FIG. 1 for clarity.

For illustrative purposes, similar or same parts in a three-dimensionalNAND device are labeled using same element numbers. However, elementnumbers are merely used to distinguish relevant parts in the DetailedDescription and do not indicate any similarity or difference infunctionalities, compositions, or locations. Memory device 200illustrated in FIG. 2 provides a side view of a three-dimensional NANDmemory device, according to some embodiments. Memory device 300illustrated in FIG. 3 provides a side view of another three-dimensionalNAND memory device, according to some embodiments. FIGS. 4A-4Hillustrate an example fabrication process for forming thethree-dimensional NAND memory device illustrated in FIG. 2, according tosome embodiments. FIGS. 5A-5E illustrate an example fabrication processfor forming the three-dimensional NAND memory device illustrated in FIG.3, according to some embodiments. Other parts of the memory devices arenot shown for ease of description. Although using three-dimensional NANDdevices as examples, in various applications and designs, the disclosedstructures can also be applied in similar or different semiconductordevices to, e.g., reduce the density of metal connections or wiring. Thespecific application of the disclosed structures should not be limitedby the embodiments of the present disclosure. For illustrative purposes,word lines and gate electrodes are used interchangeably to describe thepresent disclosure.

FIG. 2 illustrates an exemplary memory device 200, according to someembodiments. Memory device 200 includes a substrate 202. Substrate 202can provide a platform for forming subsequent structures. Suchsubsequent structures are formed on a front (e.g., top) surface ofsubstrate 202. And such subsequent structures are said to be formed in avertical direction (e.g., orthogonal to the front surface of substrate202.) In FIG. 2, and for all subsequent illustrated structures, the Xand Y directions are along a plane parallel to the front and backsurfaces of substrate 202, while the Z direction is in a directionorthogonal to the front and back surfaces of substrate 202.

In some embodiments, substrate 202 includes any suitable material forforming the three-dimensional memory device. For example, substrate 202can include silicon, silicon germanium, silicon carbide, silicon oninsulator (SOI), germanium on insulator (GOI), glass, gallium nitride,gallium arsenide, and/or other suitable III-V compound.

Substrate 202 can include one or more peripheral devices 204. Peripheraldevices 204 can be formed “on” substrate 202, in which the entirety orpart of the peripheral device 204 is formed in substrate 202 (e.g.,below the top surface of substrate 202) and/or directly on substrate202. Any of peripheral devices 204 can include transistors formed onsubstrate 202. Doped regions to form source/drain regions of thetransistors can be formed in substrate 202 as well, as would beunderstood to one skilled in the relevant art.

In some embodiments, peripheral devices 204 can include any suitabledigital, analog, and/or mixed-signal peripheral circuits used forfacilitating the operation of memory device 200. For example, peripheraldevices 204 can include one or more of a page buffer, a decoder (e.g., arow decoder and a column decoder), a sense amplifier, a driver, a chargepump, a current or voltage reference, or any active or passivecomponents of the circuits (e.g., transistors, diodes, resistors, orcapacitors). In some embodiments, peripheral devices 204 are formed onsubstrate 202 using complementary metal-oxide-semiconductor (CMOS)technology (also known as a “CMOS chip”).

One or more peripheral interconnect layers 206 can be included aboveperipheral devices 204 to transfer electrical signals to and fromperipheral devices 204. Peripheral interconnect layers 206 can includeone or more contacts and one or more interconnect conductor layers eachincluding one or more interconnect lines and/or vias. As used herein,the term “contact” can broadly include any suitable types ofinterconnects, such as middle-end-of-line (MEOL) interconnects andback-end-of-line (BEOL) interconnects, including vertical interconnectaccesses (e.g., vias) and lateral lines (e.g., interconnect lines).Peripheral interconnect layers 206 can further include one or moreinterlayer dielectric (ILD) layers, generally represented by dielectricmaterial 208. The contacts and the conductor layers in peripheralinterconnect layers 206 can include conductor materials including, butnot limited to, tungsten (W), cobalt (Co), copper (Cu), aluminum (Al),silicides, or any combination thereof. Dielectric material 208 caninclude silicon oxide, silicon nitride, silicon oxynitride, dopedsilicon oxide, or any combination thereof.

A semiconductor layer 210 is disposed over dielectric material 208 andperipheral interconnect layers 206, according to some embodiments.Semiconductor layer 210 can be epitaxially grown silicon or any otherepitaxially grown semiconducting material. Semiconductor layer 210 canalso be deposited using well-known vapor deposition techniques such aschemical vapor deposition (CVD) or physical vapor deposition (PVD)techniques.

A layer stack 212 that includes alternating conductor and insulatorlayers is disposed on semiconductor layer 210. Any number of alternatingconductor/insulator layers may be used in layer stack 212. The conductorlayers can each have the same thickness or have different thicknesses.Similarly, the insulator layers can each have the same thickness or havedifferent thicknesses. The conductor layers can include conductormaterials including, but not limited to, W, Co. Cu, Al, doped silicon,silicides, or any combination thereof. The insulator layers can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, or any combination thereof. In someembodiments, the insulator layers represent empty space (e.g., vacuum).

Extending vertically through layer stack 212, and over semiconductorlayer 210, is a plurality of structures 214. Plurality of structures 214can include any number of NAND memory strings 216 and/or conductivecontacts 218. Each of NAND memory strings 216 provides a plurality ofmemory bit locations controlled by voltage applied to corresponding wordlines (e.g., the conductor layers of layer stack 212). One or both ofthe conductive top and bottom portions of each of NAND memory strings216 can be coupled to bit lines that control current flow through achannel layer of each NAND memory string 216.

Conductive contacts 218 can be through array contacts (TAC). Conductivecontacts 218 can extend through layer stack 212 and deliver signals toconductive layers or pads disposed both above and below layer stack 212.

According to some embodiments, memory device 200 includes two differentlevels of contact lines for making contact with each of plurality ofstructures 214. For example, a first set of conductive lines 228 can belocated on one side of plurality of structures 214 (in the z direction),and a second set of conductive lines 230 can be located on an oppositeside of plurality of structures 214 (in the z direction). Each of firstand second sets of conductive lines 228 and 230 can include bit linescoupled to one or more of NAND memory strings 216, word lines coupled tothe conductive layers of layer stack 212 using conductive vias 226, andother contact lines coupled to conductive contacts 218. By splittingsuch conductive lines between separate locations, the density of thelines in a single location is decreased, leading to reduced cross-talkand faster operation speeds of memory device 200.

The various conductive lines may be staggered between first set ofconductive lines 228 and second set of conductive lines 230 in anyfashion. The staggering of the conductive lines can create a comb-likearrangement of the conductive lines. In one example, each of conductivecontacts 218 is connected to a corresponding conductive line in secondset of conductive lines 230, and each of NAND memory strings 216 isconnected to a corresponding bit line in first set of conductive lines228. Each of NAND memory strings 216 can be connected to a correspondingbit line in first set of conductive lines 228 using vias 238 through athickness of semiconductor layer 210. In another example, the conductivelines alternate between being located in either first set of conductivelines 228 or second set of conductive lines 230 along the x-directionfor each of plurality of structures 214. In yet another example, the bitlines connected to NAND memory strings 216 are staggered such that thebit lines alternate between being located in first set of conductivelines 228 and second set of conductive lines 230 along the x-directionfor each of NAND memory strings 216. Any other arrangements are possibleas well, so long as the conductive lines coupled to each of plurality ofstructures 214 are not all located along the same plane.

In some embodiments, any first set of structures of plurality ofstructures 214 can be coupled to conductive lines in the first set ofconductive lines 228, and any second set of structures of plurality ofstructures 214 can be coupled to conductive lines in the second set ofconductive lines 230. In some embodiments, the first set of structurescan include all NAND memory strings 216 and the second set of structurescan include all conductive contacts 218. The first set of structures canbe different than the second set of structures. Furthermore, in someembodiments, the first set of structures includes entirely differentstructures than the second set of structures. In some embodiments,second set of conductive lines 230 are disposed over an opposite side ofsemiconductor layer 210 in the z-direction compared to first set ofconductive lines 228.

Memory device 200 includes one or more interconnect layers 232 havingsubstantially the same properties as peripheral interconnect layers 206.Interconnect layers 232 can further include one or more interlayerdielectric (ILD) layers, generally represented by dielectric material234. Dielectric material 234 can be similar to dielectric material 208.Interconnect layers 232 can include conducive pads 236 at a top surfaceof semiconductor device 200. Conductive pads 236 can be used to provideelectrical connection to external devices and their use would be wellunderstood to a person skilled in the relevant art.

FIG. 3 illustrates another example of a memory device 300, according tosome embodiments. Memory device 300 is similar to memory device 200 andincludes many of the same components, the details of which are notrepeated in the description of memory device 300. However, the locationand orientation of certain components are different between memorydevice 200 and memory device 300. The various components of memorydevice 200 are each disposed over one surface of substrate 202, whilethe various components of memory device 300 can be disposed on eithersurface of substrate 302. Substrate 302 can have similar properties assubstrate 202. In some embodiments, substrate 302 is thinner thansubstrate 202.

Over a first surface of substrate 302, memory device 300 includes adielectric material 306 followed by semiconductor layer 210. Theformation of the memory array above semiconductor layer 210 is similarto that described in memory device 200.

Memory device 300 similarly includes two levels of contact lines formaking contact with each of plurality of vertical structures 214. Forexample, a first set of conductive lines 303 can be located on one sideof plurality of structures 214 (in the z direction), and a second set ofconductive lines 304 can be located on an opposite side of plurality ofstructures 214 (in the z direction). The first set of conductive lines303 can be located within dielectric material 306. First set ofconductive lines 303 and second set of conductive lines 304 can beconnected to various ones of plurality of structures 214 as describedabove for memory device 200.

Memory device 300 includes one or more peripheral devices 204 formed ona second surface of substrate 302 that is opposite from the firstsurface. One or more peripheral devices can be electrically coupled withperipheral interconnect layers 206 surrounded by dielectric material 208as described above for memory device 200. Additionally, one or more ofperipheral devices 204 can be electrically coupled to one or more of thefirst set of conductive lines 303 using vias 308 passing through athickness of substrate 302.

Peripheral interconnect layers 206 can include conducive pads 310 at atop surface of semiconductor device 300. Conductive pads 310 can be usedto provide electrical connection to external devices and their use wouldbe well understood to a person skilled in the relevant art.

FIGS. 4A-4H illustrate an example fabrication process for forming memorydevice 200. FIG. 4A illustrates the formation of peripheral devices 204on substrate 202. Peripheral devices 204 can include a plurality oftransistors formed on substrate 202. The transistors can be formed by aplurality of processing steps including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, chemical mechanical polishing (CMP), or any combinationthereof. In some embodiments, doped regions are formed in substrate 202,which function, for example, as source regions and/or drain regions ofthe transistors. In some embodiments, isolation regions, such as shallowtrench isolation (STI), is also formed in substrate 202. Theseparticular features are not explicitly illustrated as they are wellunderstood structures to a person skilled in the relevant art. Anyarrangement of transistors or electrically passive devices (e.g.,capacitors, resistors, etc.) may be provided on substrate 202.

FIG. 4B illustrates the formation of a first interconnect layer aboveperipheral devices 204. The first interconnect layer includes one ormore contacts 402 and patterned conductor layers 404. Contacts 402 canbe provided to contact either patterned features of peripheral devices204 or portions of substrate 202. Conductor layers 404 representconductive traces that extend into and out of the page. Contacts 402 andpatterned conductor layers 404 can include conductor materials depositedby one or more thin film deposition processes including, but not limitedto, CVD, PVD, ALD, electroplating, electroless plating, or anycombination thereof. Fabrication processes to form the contacts andconductor layers can also include photolithography, CMP, wet/dry etch,or any combination thereof.

One or more deposited dielectric layers are represented by dielectricmaterial 208. Dielectric material 208 can represent any number ofdeposited dielectric layers that include materials deposited by one ormore thin film deposition processes including, but not limited to, CVD,PVD, ALD, or any combination thereof.

FIG. 4C illustrates the formation of one or more additional interconnectlayers to form peripheral interconnect layers 206. Any number ofinterconnect layers may be formed each having vias connecting differentlevels of conductor layers. Additional dielectric layers are alsodeposited to increase a total thickness of dielectric material 208. Atop surface 406 of dielectric material 208 can be planarized using apolishing technique, such as chemical mechanical polishing (CMP),according to some embodiments.

FIG. 4D illustrates the formation of semiconductor layer 210 overperipheral interconnect layers 206. Semiconductor layer 210 can besilicon that is epitaxially grown or any other semiconducting materialthat can be epitaxially grown. Semiconductor layer 210 can also bedeposited using well-known vapor deposition techniques such as chemicalvapor deposition (CVD) or physical vapor deposition (PVD) techniques.According to some embodiments, one or more conductive vias 238 areformed through a thickness of semiconductor layer 210. Conductive vias238 can be electrically coupled with one or more layers of peripheralinterconnect layers 206.

FIG. 4E illustrates the formation of a layer stack 408 havingalternating sacrificial layers 410 and dielectric layers 412 formed oversemiconductor layer 210, according to some embodiments.

The formation of layer stack 408 can involve depositing sacrificiallayers 410 to each have the same thickness or to have differentthicknesses. Example thicknesses of sacrificial layers 410 can rangefrom 10 nm to 60 nm. Similarly, dielectric layers 412 can each have thesame thickness or have different thicknesses. Example thicknesses ofdielectric layers 412 can range from 10 nm to 60 nm.

The dielectric material of sacrificial layers 410 is different from thedielectric material of dielectric layers 412, according to someembodiments. For example, each of sacrificial layers 410 can be siliconnitride while each of dielectric layers 412 can be silicon dioxide.Other example materials for each of sacrificial layers 410 includepoly-crystalline silicon, poly-crystalline germanium, andpoly-crystalline germanium-silicon. The dielectric materials used forany of dielectric layers 412 or sacrificial layers 410 can includesilicon oxide, silicon nitride, silicon oxynitride, or any combinationthereof. It should be understood that any number of dielectric layersmay be included in layer stack 408.

Layer stack 408 includes a portion having a staircase structure whereeach of at least sacrificial layers 410 terminate at a different lengthin the horizontal ‘X’ direction. This staircase structure allows forelectrical contacts to connect each of the word lines of the memorydevice, as will be shown later.

FIG. 4F illustrates the formation of vertical structures 214 throughlayer stack 408, according to some embodiments. Vertical structures 214includes both NAND memory strings 216 and conductive contacts 218.

In some embodiments, NAND memory strings 216 include a plurality ofmemory layers 414 and a core insulator 416 that extend between anepitaxially grown material 420 on semiconductor layer 210 and a topconductive material 418. Epitaxially grown material 420 can includeepitaxially grown silicon, and may extend into a portion ofsemiconductor layer 210. Top conductive material 418 may include dopedpolysilicon or any other conductive material.

Plurality of memory layers 414 of each NAND memory string 216 caninclude a semiconductor channel layer, such as amorphous silicon,polysilicon, or single crystalline silicon. Plurality of memory layers414 can also include a tunneling layer, a storage layer (also known as“charge trap/storage layer”), and a blocking layer. The blocking layer,the storage layer, the tunneling layer, and the semiconductor channellayer are arranged over one another on the sidewalls in the order listed(with the blocking layer deposited first and the semiconductor channellayer deposited last), according to some embodiments. The tunnelinglayer can include silicon oxide, silicon nitride, or any combinationthereof. The blocking layer can include silicon oxide, silicon nitride,high dielectric constant (high-k) dielectrics, or any combinationthereof. The storage layer can include silicon nitride, siliconoxynitride, silicon, or any combination thereof. In some embodiments,plurality of memory layers 414 includes silicon oxide/siliconnitride/silicon oxide (ONO) dielectrics (e.g., a tunneling layerincluding silicon oxide, a storage layer including silicon nitride, anda blocking layer including silicon oxide). Core insulator 416 can be anydielectric material, such as oxide, for example. In some embodiments,plurality of memory layers 414 surround core insulator 416. A diameterof NAND memory strings 216 can be between about 100 nm and 200 nm.

In some embodiments, the formation of NAND memory strings 216 includesetching a plurality of openings through layer stack 408 and into aportion of semiconductor layer 210. Epitaxially grown material 420 isthen formed at the bottom of the plurality of openings, followed bydeposition of plurality of memory layers 414 and deposition of coreinsulator 416, such that plurality of memory layers 414 surround coreinsulator 416. Top conductive material 418 can be formed over pluralityof memory layers 414 and core insulator 416, and may be formed afteretching a top portion of memory layers 414 and core insulator 416. Eachof the various layers of plurality of memory layers 414 can be formedusing any suitable deposition technique, such as sputtering,evaporation, or chemical vapor deposition (CVD). Example CVD techniquesinclude plasma-enhanced CVD (PECVD), low pressure CVD (LPCVD), andatomic layer deposition (ALD). Similarly, core insulator 416 can beformed using any of the techniques described above.

In some embodiments, NAND memory strings 216 are electrically coupled tocorresponding bit lines in first set of conductive lines 228 using vias238 extending through a thickness of semiconductor layer 210. Not everystructure of vertical structures 214 includes a connection to aconductive line in first set of conductive lines 228. According to someembodiments, only NAND memory strings 216 are connected to correspondingconductive lines in first set of conductive lines 228.

Conductive contacts 218 can be TACs that each include a conductive core424 surrounding by an insulating material 422. Conductive core 424 caninclude conductor materials including, but not limited to, tungsten (W),cobalt (Co), copper (Cu), aluminum (Al), silicides, or any combinationthereof. Insulating material 422 can include silicon oxide, siliconnitride, silicon oxynitride, doped silicon oxide, or any combinationthereof. Conductive core 424 and insulating material 422 can each beformed using any suitable deposition technique, such as sputtering,evaporation, or chemical vapor deposition (CVD). Example CVD techniquesinclude plasma-enhanced CVD (PECVD), low pressure CVD (LPCVD), andatomic layer deposition (ALD).

According to some embodiments, a chemical mechanical polishing process(CMP) can be performed to planarize a top surface 425 of thesemiconductor structure following the formation of plurality of verticalstructures 214.

FIG. 4G illustrates additional fabricated structures and layers ofmemory device 200. According to some embodiments, sacrificial layers 410of layer stack 408 are removed and replaced with conductor layers 426 toform layer stack 212 having alternating conductor layers 426 anddielectric layers 412. Conductor layers 426 can act as word lines foreach of NAND memory strings 216. Sacrificial layers 410 can be removedby a suitable etching process, e.g., an isotropic dry etch or a wetetch. The etching process can have sufficiently high etching selectivityof the material of sacrificial layers 410 over the materials of otherparts of the structure, such that the etching process can have minimalimpact on the other parts of the structure. In some embodiments,sacrificial layers 410 include silicon nitride and the etchant of theisotropic dry etch includes one or more of CF₄, CHF₃, C₄F₈, C₄F₆, andCH₂F₂. The radio frequency (RF) power of the isotropic dry etch can belower than about 100 W and the bias can be lower than about 10 V. Insome embodiments, sacrificial layers 410 include silicon nitride and theetchant of the wet etch includes phosphoric acid. In some embodiments,dielectric layers 412 can be removed such that empty space (vacuum)exists between conductor layers 426. The vacuum space between conductorlayers 426 acts as an insulating layer and may help reduce parasiticcapacitance.

Conductor layers 426 can include conductor materials including, but notlimited to, W, Co, Cu, Al, doped silicon, silicides, or any combinationthereof. Each of conductor layers 426 can be deposited into the regionsleft behind by the removal of sacrificial layers 410 using a suitabledeposition method such as CVD, sputtering, MOCVD, and/or ALD.

Contact is made to each of conductor layers 426 using vias 226 extendingthrough dielectric material 234. A second set of conductive lines 230are formed to make electrical contact with one or more of the word linesand to one or more of conductive contacts 218. Not every structure ofvertical structures 214 includes a connection to a conductive line insecond set of conductive lines 230. According to some embodiments, onlyconductive contacts 218 are connected to corresponding conductive linesin second set of conductive lines 230.

FIG. 4H illustrates the formation of one or more interconnect layers 232making electrical connection with one or more of second set ofconductive lines 230, according to some embodiments. Any number ofinterconnect layers may be formed with each having vias connectingdifferent levels of conductor layers. Additional dielectric layers arealso deposited to increase a total thickness of dielectric material 234.

According to some embodiments, conducive pads 236 are formed at a topsurface of memory device 200. Conductive pads 236 can be used to provideelectrical connection to external devices and their use would be wellunderstood to a person skilled in the relevant art.

FIGS. 5A-5E illustrate an example fabrication process for forming memorydevice 300. FIG. 5A illustrates the formation of dielectric material 306over a first surface of substrate 302. A first set of conductive lines303 is formed within dielectric material 306.

A semiconductor layer 210 is subsequently formed over dielectricmaterial 306. One or more vias 238 are formed through a thickness ofsemiconductor layer 210 and can make electrical connection with one ormore of the conductive lines in first set of conductive lines 303.

FIG. 5B illustrates the formation of plurality of vertical structures214 through layer stack 212. Additionally, second set of conductivelines 304 is formed over plurality of vertical structures 214, andconnections are made using conductive vias between conductive contacts218 and corresponding conductive lines of second set of conductive lines304, according to some embodiments. One or more interconnect layers 232are formed having electrical connection with one or more conductivelines in second set of conductive lines 304. The details of theformation of these components is the same as described above for FIGS.4E-4H.

Each of NAND memory strings 216 is electrically connected to acorresponding bit line of first set of conductive lines 303 using vias238, according to some embodiments. According to some embodiments, onlyNAND memory strings 216 are electrically connected to bit lines in firstset of conductive lines 303 and only conductive contacts 218 areelectrically connected to conductive lines in second set of conductivelines 304.

FIG. 5C illustrates the thinning of substrate 302 and subsequentformation of peripheral devices 204 on a second surface of substrate 302opposite from the first surface, according to some embodiments. Theformation of peripheral devices 204 is the same as described above forFIG. 4A.

FIG. 5D illustrates the formation of dielectric material 208 overperipheral devices 204, and the formation of a first interconnect levelwithin dielectric material 208. The first interconnect level provideselectrical contact to peripheral devices 204 and also to one or more bitlines of first set of conductive lines 303 using vias 308 that extendthrough a thickness of the thinned substrate 302.

FIG. 5E illustrates the formation of the remainder of peripheralinterconnect layers 206 making electrical connection with peripheraldevices 204 and one or more bit lines of first set of conductive lines303. The formation of peripheral interconnect layers 206 is the same asdescribed above in FIG. 4C. According to some embodiments, conducivepads 310 are formed at a top surface of memory device 300. Conductivepads 310 can be used to provide electrical connection to externaldevices and their use would be well understood to a person skilled inthe relevant art.

FIG. 6 is a flowchart of an exemplary method 600 for forming a NANDmemory device, according to the first embodiment. The operations ofmethod 600 are generally illustrated in FIGS. 4A-4H. It should beunderstood that the operations shown in method 600 are not exhaustiveand that other operations can be performed as well before, after, orbetween any of the illustrated operations. In various embodiments of thepresent disclosure, the operations of method 600 can be performed in adifferent order and/or vary.

In operation 602, peripheral devices are formed on a substrate. Theperipheral devices can include a plurality of transistors formed on thesubstrate. The peripheral devices can include any arrangement oftransistors or electrically passive devices (e.g., capacitors,resistors, etc.) The transistors can be formed by a plurality ofprocessing steps including, but not limited to, photolithography,dry/wet etch, thin film deposition, thermal growth, implantation,chemical mechanical polishing (CMP), or any combination thereof. In someembodiments, doped regions are formed in the substrate, which function,for example, as source regions and/or drain regions of the transistors.In some embodiments, isolation regions, such as shallow trench isolation(STI), is also formed in the substrate.

In operation 604, one or more interconnect layers are formed over theperipheral devices. Any number of interconnect layers may be formed eachhaving vias connecting different levels of conductor layers. Adielectric material can be deposited to surround the one or moreinterconnect layers.

In operation 606, a first set of conductive lines is formed and areelectrically coupled to the one or more interconnect layers. The firstset of conductive lines can also be considered to be one layer of theone or more interconnect layers.

In operation 608, a semiconductor layer is formed over the one or moreinterconnect layers. The semiconductor layer can also be formed over thefirst set of conductive lines. The semiconductor layer can be depositedusing well-known vapor deposition techniques such as chemical vapordeposition (CVD) or physical vapor deposition (PVD) techniques. In someembodiments the semiconductor layer is epitaxially grown silicon.

In operation 610, one or more vias are formed through a thickness of thesemiconductor layer. The one or more vias make electrical contact withthe first set of conductive lines, according to some embodiments.

In operation 612, a layer stack having alternating conductor andinsulator layers is formed on the semiconductor layer. The formation ofthe layer stack can involve first depositing alternating types ofdielectric materials (e.g., sacrificial layers alternating withdielectric layers). The layers of the alternating dielectric stack caninclude materials including, but not limited to, silicon oxide, siliconnitride, silicon oxynitride, or any combination thereof. The layers ofthe alternating dielectric stack can include dielectric materialsdeposited by one or more thin film deposition processes including, butnot limited to, CVD, PVD, ALD, or any combination thereof. At a latertime, the sacrificial layers can be removed and replaced by conductorlayers to form the alternating conductor and insulator layers. Theinsulator layers may be dielectric layers, or may be regions of vacuumbetween the conductor layers.

In operation 614, a plurality of vertical structures are formed throughthe layer stack. The vertical structures can include one or more NANDmemory strings having a plurality of memory layers surrounding a coreinsulator. Forming the plurality of memory layers may include depositinga semiconductor channel layer, such as amorphous silicon, polysilicon,or single crystalline silicon, a tunneling layer, a storage layer (alsoknown as “charge trap/storage layer”), and a blocking layer. Theblocking layer, the storage layer, the tunneling layer, and thesemiconductor channel layer may each be deposited in the order listed onthe sidewalls of the one or more first openings, according to someembodiments. The tunneling layer can include silicon oxide, siliconnitride, or any combination thereof. The blocking layer can includesilicon oxide, silicon nitride, high dielectric constant (high-k)dielectrics, or any combination thereof. The storage layer can includesilicon nitride, silicon oxynitride, silicon, or any combinationthereof. In some embodiments, the plurality of memory layers includessilicon oxide/silicon nitride/silicon oxide (ONO) dielectrics (e.g., atunneling layer including silicon oxide, a storage layer includingsilicon nitride, and a blocking layer including silicon oxide). The oneor more NAND memory strings can be formed above the vias formed inoperation 610, such that only the one or more NAND memory strings areelectrically connected to corresponding bit lines in the first set ofconductive lines using the vias.

Other vertical structures can include conductive contacts such as TACsthat include a core conductive material that extends vertically throughthe layer stack.

According to some embodiments, any first set of the vertical structurescan be coupled to corresponding conductive lines in the first set ofconductive lines using the vias.

In operation 616, a second set of conductive lines is formed that iscoupled to a second set of the vertical structures. The second set ofvertical structures is different from the first set of verticalstructures, though some of the vertical structures may be in both thefirst and second sets. According to some embodiments, the second set ofvertical structures can include any number of NAND strings and verticalconductive contacts. In one example, the second set of verticalstructures includes only the vertical conductive contacts.

According to some embodiments, the second set of conductive lines areformed on a different plane than the first set of conductive lineseither above or below the plurality of vertical structures. The secondset of conductive lines can be formed over an opposite end verticallydistanced from the plurality of vertical structures compared to thefirst set of conductive lines. By staggering the position of the variousconductive lines on two different planes, the density of conductivelines on a given plane is reduced.

FIG. 7 is a flowchart of an exemplary method 700 for forming a NANDmemory device, according to the first embodiment. The operations ofmethod 700 are generally illustrated in FIGS. 5A-5E. It should beunderstood that the operations shown in method 700 are not exhaustiveand that other operations can be performed as well before, after, orbetween any of the illustrated operations. In various embodiments of thepresent disclosure, the operations of method 700 can be performed in adifferent order and/or vary.

In operation 702, a first set of conductive lines are formed over afirst surface of a substrate. The first set of conductive lines can beformed within a dielectric material deposited first over the firstsurface of the substrate.

In operation 704, a semiconductor layer is formed over the first set ofconductive lines in the dielectric material. The semiconductor layer canbe deposited using well-known vapor deposition techniques such aschemical vapor deposition (CVD) or physical vapor deposition (PVD)techniques. In some embodiments the semiconductor layer is epitaxiallygrown silicon.

In operation 706, one or more vias are formed through a thickness of thesemiconductor layer. The one or more vias make electrical contact withthe first set of conductive lines, according to some embodiments.

In operation 708, a layer stack having alternating conductor andinsulator layers is formed on the semiconductor layer. The formation ofthe layer stack can involve first depositing alternating types ofdielectric materials (e.g., sacrificial layers alternating withdielectric layers). The layers of the alternating dielectric stack caninclude materials including, but not limited to, silicon oxide, siliconnitride, silicon oxynitride, or any combination thereof. The layers ofthe alternating dielectric stack can include dielectric materialsdeposited by one or more thin film deposition processes including, butnot limited to, CVD, PVD, ALD, or any combination thereof. At a latertime, the sacrificial layers can be removed and replaced by conductorlayers to form the alternating conductor and insulator layers. Theinsulator layers may be dielectric layers, or may be regions of vacuumbetween the conductor layers.

In operation 710, a plurality of vertical structures are formed throughthe layer stack. The vertical structures can include one or more NANDmemory strings having a plurality of memory layers surrounding a coreinsulator. Forming the plurality of memory layers may include depositinga semiconductor channel layer, such as amorphous silicon, polysilicon,or single crystalline silicon, a tunneling layer, a storage layer (alsoknown as “charge trap/storage layer”), and a blocking layer. Theblocking layer, the storage layer, the tunneling layer, and thesemiconductor channel layer may each be deposited in the order listed onthe sidewalls of the one or more first openings, according to someembodiments. The tunneling layer can include silicon oxide, siliconnitride, or any combination thereof. The blocking layer can includesilicon oxide, silicon nitride, high dielectric constant (high-k)dielectrics, or any combination thereof. The storage layer can includesilicon nitride, silicon oxynitride, silicon, or any combinationthereof. In some embodiments, the plurality of memory layers includessilicon oxide/silicon nitride/silicon oxide (ONO) dielectrics (e.g., atunneling layer including silicon oxide, a storage layer includingsilicon nitride, and a blocking layer including silicon oxide). The oneor more NAND memory strings can be formed above the vias formed inoperation 706, such that only the one or more NAND memory strings areelectrically connected to corresponding bit lines in the first set ofconductive lines using the vias.

Other vertical structures can include conductive contacts such as TACsthat include a core conductive material that extends vertically throughthe layer stack.

According to some embodiments, any first set of the vertical structurescan be coupled to corresponding conductive lines in the first set ofconductive lines using the vias.

In operation 712, a second set of conductive lines is formed over anopposite end of the vertical structures from the first set of conductivelines. The second set of conductive lines is coupled to a second set ofthe vertical structures. The second set of vertical structures isdifferent from the first set of vertical structures, though some of thevertical structures may be in both the first and second sets. Accordingto some embodiments, the second set of vertical structures can includeany number of NAND strings and vertical conductive contacts. In oneexample, the second set of vertical structures includes only thevertical conductive contacts.

According to some embodiments, the second set of conductive lines areformed on a different plane than the first set of conductive lineseither above or below the plurality of vertical structures. The secondset of conductive lines can be formed over an opposite end verticallydistanced from the plurality of vertical structures compared to thefirst set of conductive lines. By staggering the position of the variousconductive lines on two different planes, the density of conductivelines on a given plane is reduced.

In operation 714, peripheral devices are formed on a second surface ofthe substrate opposite from the first surface. In some embodiments, thesubstrate is thinned before the formation of the peripheral devices. Theperipheral devices are formed in the same way as described above inoperation 602, and may also include one or more interconnect layersconnected to the peripheral devices. The one or more interconnect layerscan also make electrical connection with one or more of the bit lines inthe first set of conductive lines using conductive vias passing througha thickness of the substrate.

The present disclosure describes various embodiments ofthree-dimensional memory devices and methods of making the same. In someembodiments, a memory device includes substrate and one or moreperipheral devices on the substrate. The memory device also includes oneor more interconnect layers electrically coupled with the one or moreperipheral devices, and a semiconductor layer disposed over the one ormore interconnect layers. A layer stack having alternating conductor andinsulator layers is disposed above the semiconductor layer. A pluralityof structures extend vertically through the layer stack. The memorydevice also includes a first set of conductive lines electricallycoupled with a first set of the plurality of structures and a second setof conductive lines electrically coupled with a second set of theplurality of structures different from the first set. The first set ofconductive lines are vertically distanced from one end of the pluralityof structures and the second set of conductive lines are verticallydistanced from an opposite end of the plurality of structures.

In some embodiments, a memory device includes a substrate, a dielectricmaterial disposed on a first surface of the substrate, a semiconductorlayer disposed on the dielectric material, and a layer stack havingalternating conductor and insulator layers disposed on the semiconductorlayer. The memory device also includes a plurality of structuresextending vertically through the layer stack. The memory device alsoincludes a first set of conductive lines electrically coupled with afirst set of the plurality of structures and a second set of conductivelines electrically coupled with a second set of the plurality ofstructures different from the first set. The first set of conductivelines are vertically distanced from one end of the plurality ofstructures and the second set of conductive lines are verticallydistanced from an opposite end of the plurality of structures. Thememory device also includes one or more peripheral devices formed on asecond surface of the substrate, the second surface being opposite tothe first surface.

In some embodiments, a method to form a memory device includes formingone or more peripheral devices on a substrate and one or moreinterconnect layers over the one or more peripheral devices. The one ormore interconnect layers are electrically coupled with the one or moreperipheral devices. The method also includes forming a first set ofconductive lines electrically coupled with the one or more interconnectlayers, and forming a semiconductor layer over the first set ofconductive lines. The method includes forming vias through a thicknessof the semiconductor layer where the vias are electrically coupled tothe first set of conductive lines. The method also includes forming, onthe semiconductor layer, a layer stack having alternating conductor andinsulator layers. The method includes forming a plurality of structureseach extending vertically through the layer stack. A first set of theplurality of structures is electrically coupled to the first set ofconductive lines using the vias. The method also includes forming asecond set of conductive lines over an end vertically distanced from theplurality of structures. The second set of conductive lines iselectrically coupled to a second set of the plurality of structuresdifferent from the first set.

In some embodiments, a method to form a memory device includes forming afirst set of conductive lines over a first surface of a substrate, thefirst set of conductive lines being surrounded by a dielectric layer onthe first surface of the substrate. The method also includes forming asemiconductor layer over the first set of conductive lines, and formingvias through a thickness of the semiconductor layer. The vias areelectrically coupled to the first set of conductive lines. The methodalso includes forming, on the semiconductor layer, a layer stack havingalternating conductor and insulator layers. The method includes forminga plurality of structures each extending vertically through the layerstack. A first set of the plurality of structures is electricallycoupled to the first set of conductive lines using the vias. The methodalso includes forming a second set of conductive lines over an endvertically distanced from the plurality of structures. The second set ofconductive lines are electrically coupled to a second set of theplurality of structures different from the first set. The method alsoincludes forming one or more peripheral devices on a second surface ofthe substrate opposite from the first surface.

The foregoing description of the specific embodiments will so fullyreveal the general nature of the present disclosure that others can, byapplying knowledge within the skill of the art, readily modify and/oradapt for various applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the disclosure and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the disclosure andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A memory device, comprising: a substrate; one ormore peripheral devices formed on the substrate; one or moreinterconnect layers disposed above the one or more peripheral devicesand electrically coupled with the one or more peripheral devices; asemiconductor layer disposed over the one or more interconnect layers; alayer stack having alternating conductor and insulator layers disposedabove the semiconductor layer; a plurality of structures extendingvertically through the layer stack; a first set of conductive lineselectrically coupled with a first set of the plurality of structures andwith the one or more interconnect layers, the first set of conductivelines being vertically distanced from one end of the plurality ofstructures; and a second set of conductive lines electrically coupledwith a second set of the plurality of structures different from thefirst set of the plurality of structures, the second set of conductivelines being vertically distanced from an opposite end of the pluralityof structures.
 2. The memory device of claim 1, wherein the plurality ofstructures comprises NAND memory strings.
 3. The memory device of claim2, wherein the first set of the plurality of structures includes a firstset of the NAND memory strings and the second set of the plurality ofstructures includes a second set of the NAND memory strings.
 4. Thememory device of claim 2 wherein the plurality of structures comprisesconductive contacts.
 5. The memory device of claim 4, wherein the firstset of the plurality of structures includes only the NAND memory stringsand the second set of the plurality of structures includes only theconductive contacts.
 6. A memory device, comprising: a substrate; adielectric material disposed on a first surface of the substrate; asemiconductor layer disposed on the dielectric material; a layer stackhaving alternating conductor and insulator layers disposed on thesemiconductor layer; a plurality of structures extending verticallythrough the layer stack; a first set of conductive lines electricallycoupled with a first set of the plurality of structures, the first setof conductive lines being vertically distanced from one end of theplurality of structures; a second set of conductive lines electricallycoupled with a second set of the plurality of structures different fromthe first set of the plurality of structures, the second set ofconductive lines being vertically distanced from an opposite end of theplurality of structures; and one or more peripheral devices formed on asecond surface of the substrate, the second surface being opposite tothe first surface.
 7. The memory device of claim 6, wherein theplurality of structures comprises NAND memory strings.
 8. The memorydevice of claim 7, wherein the first set of the plurality of structuresincludes a first set of the NAND memory strings and the second set ofthe plurality of structures includes a second set of the NAND memorystrings.
 9. The memory device of claim 7, wherein the plurality ofstructures comprises one or more conductive contacts.
 10. The memorydevice of claim 9, wherein the first set of the plurality of structuresincludes only the NAND memory strings and the second set of theplurality of structures includes only the conductive contacts.
 11. Amethod for forming a memory device, comprising: forming one or moreperipheral devices on a substrate; forming one or more interconnectlayers over the one or more peripheral devices, the one or moreinterconnect layers being electrically coupled with the one or moreperipheral devices; forming a first set of conductive lines electricallycoupled with the one or more interconnect layers; forming asemiconductor layer over the first set of conductive lines; forming viasthrough a thickness of the semiconductor layer, the vias beingelectrically coupled to the first set of conductive lines; forming, onthe semiconductor layer, a layer stack having alternating conductor andinsulator layers; forming a plurality of structures each extendingvertically through the layer stack, wherein a first set of the pluralityof structures are electrically coupled to the first set of conductivelines using the vias; and forming a second set of conductive lines overan end vertically distanced from the plurality of structures, the secondset of conductive lines being electrically coupled to a second set ofthe plurality of structures different from the first set of theplurality of structures.
 12. The method of claim 11, wherein forming theplurality of structures comprises forming a plurality of NAND strings,wherein forming the plurality of NAND strings comprises: depositing aplurality of memory layers comprising a blocking layer, a storage layer,a tunneling layer, and a channel layer; and depositing a core insulatormaterial.
 13. The method of claim 12, wherein the forming of theplurality of structures comprises forming the first set of the pluralityof structures as a first set of the NAND strings and forming the secondset of the plurality of structures as a second set of the NAND stringsdifferent from the first set of the NAND strings.
 14. The method ofclaim 12, wherein forming the plurality of structures comprises forminga plurality of conductive contacts.
 15. The method of claim 14, whereinforming the plurality of structures comprises forming the second set ofthe plurality of structures only as the conductive contacts.
 16. Amethod for forming a memory device, comprising: forming a first set ofconductive lines over a first surface of a substrate, the first set ofconductive lines being surrounded by a dielectric layer on the firstsurface of the substrate; forming a semiconductor layer over the firstset of conductive lines; forming vias through a thickness of thesemiconductor layer, the vias being electrically coupled to the firstset of conductive lines; forming, on the semiconductor layer, a layerstack having alternating conductor and insulator layers; forming aplurality of structures each extending vertically through the layerstack, wherein a first set of the plurality of structures areelectrically coupled to the first set of conductive lines using thevias; forming a second set of conductive lines over an end verticallydistanced from the plurality of structures, the second set of conductivelines being electrically coupled to a second set of the plurality ofstructures different from the first set of the plurality of structures;and forming one or more peripheral devices on a second surface of thesubstrate opposite from the first surface.
 17. The method of claim 16,wherein forming the plurality of structures comprises forming aplurality of NAND strings, wherein forming the plurality of NAND stringscomprises: depositing a plurality of memory layers comprising a blockinglayer, a storage layer, a tunneling layer, and a channel layer; anddepositing a core insulator material.
 18. The method of claim 17,wherein the forming of the plurality of structures comprises forming thefirst set of the plurality of structures as a first set of the NANDstrings and forming the second set of the plurality of structures as asecond set of the NAND strings different from the first set of the NANDstrings.
 19. The method of claim 17, wherein forming the plurality ofstructures comprises forming a plurality of conductive contacts.
 20. Themethod of claim 19, wherein forming the plurality of structurescomprises forming the second set of the plurality of structures only asthe conductive contacts.